Evan M. Anderson earned his B.S. from Purdue University and his M.S.E. and Ph.D. from the University of Michigan, all in Materials Science and Engineering. For his graduate research, he conducted molecular beam epitaxy, scanning tunneling microscopy, and density functional theory calculations to investigate the surface structure and alloying of InAsSb. He then came to Sandia National Laboratories as a postdoc, initially growing III-V semiconductors by molecular beam epitaxy for optoelectronic devices. Evan then transitioned to fabricating and packaging infrared devices. Currently he is a staff member for research and development of Si-based atomic precision electronic devices.